SI9945BDY-T1-GE3 Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
| Attribute | Value |
|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.3 A |
| Maximum Drain Source Voltage | 60 V |
| Maximum Drain Source Resistance | 72 mΩ |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Transistor Configuration | Isolated |
| Pin Count | 8 |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 3.1 W |
| Width | 4mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Height | 1.5mm |
| Length | 5mm |
| Dimensions | 5 x 4 x 1.5mm |
| Transistor Material | Si |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | -55 °C |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Input Capacitance @ Vds | 665 pF @ 15 V |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
SI9945BDY-T1-GE3
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SI9945BDY-T1-GE3
