Manufacturer:	IXYS
Product Category:	MOSFET

Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	720 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	400 W
Channel Mode:	Enhancement
Tradename:	HİPerFET
Series:	IXFH14N80
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	27 ns
Forward Transconductance - Min:	8 S
Height:	21.46 mm
Length:	16.26 mm
Product Type:	MOSFET
Rise Time:	29 ns

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IXFH14N80P TO-247-3

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Etiketler: IXFH14N80P TO-247-3, 14N80P TO-247-3, 14N80P, IXFH14N80P, 14N80 TO-247-3, 14N80, 1480, IXFH14N80, IXYS, BURSAELECTRONİC, BURSA, CEA