Manufacturer:	Vishay
Product Category:	MOSFET

Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	850 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	63 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Series:	IRF
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	20 ns
Forward Transconductance - Min:	4.9 S
Height:	15.49 mm
Length:	10.41 mm
Product Type:	MOSFET
Rise Time:	23 ns

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IRF840 TO-220AB-3

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Etiketler: IRF840 TO-220AB-3, IRF840, TO-220AB-3, Vishay, BURSA, BURSAELECTRONIC, CEA