| Attribute | Attribute Value |
|---|---|
| Manufacturer | Fairchıld |
| Product Category | FETs - Single |
| Packaging | Tube |
| Part-Aliases | FQPF19N10_NL |
| Unit-Weight | 0.080072 oz |
| Mounting-Style | Through Hole |
| Package-Case | TO-220-3 |
| Technology | Si |
| Number-of-Channels | 1 Channel |
| Configuration | Single |
| Transistor-Type | 1 N-Channel |
| Pd-Power-Dissipation | 38 W |
| Maximum Operating Temperature | + 175 C |
| Operating temperature range | - 55 C |
| Fall-Time | 65 ns |
| Rise-Time | 150 ns |
| Vgs-Gate-Source-Voltage | 25 V |
| ID (drain current) | 13.6 A |
| Vds-Drain-Source-Breakdown-Voltage | 100 V |
| Rds-On-Drain-Source-Resistance | 100 mOhms |
| Transistor-Polarity | N-Channel |
| Typical-Turn-Off-Delay-Time | 20 ns |
| Turn-On Delay Time | 7.5 ns |
| Transconductance | 10 S |
| Channel-Mode | Enhancement |
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