| Attribute | Attribute Value |
|---|---|
| Manufacturer | onsemi |
| Product Category | FETs - Single |
| Series | QFET® |
Packaging  | Cut Tape (CT) Alternate Packaging |
| Unit-Weight | 0.008466 oz |
| Mounting-Style | Through Hole |
| Package-Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Technology | Si |
| Operating-Temperature | -55°C ~ 150°C (TJ) |
| Mounting-Type | Through Hole |
| Number-of-Channels | 1 Channel |
| Supplier-Device-Package | TO-92-3 |
| Configuration | Single |
| FET-Type | MOSFET N-Channel, Metal Oxide |
| Power-Max | 1W |
| Transistor-Type | 1 N-Channel |
| VDSS – Drain-Source Voltage | 600V |
| Input Capacitance | 170pF @ 25V |
| FET-Feature | Standard |
| Current-Continuous-Drain-Id-25°C | 300mA (Tc) |
| Rds-On-Max-Id-Vgs | 11.5 Ohm @ 150mA, 10V |
| Vgs-th-Max-Id | 4V @ 250μA |
| Gate-Charge-Qg-Vgs | 6.2nC @ 10V |
| Pd-Power-Dissipation | 1 W |
| Maximum Operating Temperature | + 150 C |
| Operating temperature range | - 55 C |
| Fall-Time | 27 ns |
| Rise-Time | 21 ns |
| Vgs-Gate-Source-Voltage | 30 V |
| ID (drain current) | 300 mA |
| Vds-Drain-Source-Breakdown-Voltage | 600 V |
| Rds-On-Drain-Source-Resistance | 9.3 Ohms |
| Transistor-Polarity | N-Channel |
| Typical-Turn-Off-Delay-Time | 13 ns |
| Turn-On Delay Time | 7 ns |
| Transconductance | 0.75 S |
| Channel-Mode | Enhancement |
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