BSS84PH6327XTSA2 P-Channel MOSFET, 170 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
SpecificationsAttribute Value Channel Type P Maximum Continuous Drain Current 170 mA Maximum Drain Source Voltage 60 V Maximum Drain Source Resistance 12 Ω Maximum Gate Threshold Voltage 2V Minimum Gate Threshold Voltage 1V Maximum Gate Source Voltage -20 V, +20 V Package Type SOT-23 Mounting Type Surface Mount Transistor Configuration Single Pin Count 3 Channel Mode Enhancement Category Power MOSFET Maximum Power Dissipation 360 mW Typical Turn-On Delay Time 6.7 ns Minimum Operating Temperature -55 °C Typical Gate Charge @ Vgs 1 nC @ 10 V Typical Input Capacitance @ Vds 15 pF @ -25 V Forward Diode Voltage 1.24V Typical Turn-Off Delay Time 8.6 ns Maximum Operating Temperature +150 °C Series SIPMOS Height 0.9mm Number of Elements per Chip 1 Width 1.3mm Forward Transconductance 0.13S Length 2.9mm Dimensions 2.9 x 1.3 x 0.9mm Transistor Material Si
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
| Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 170 mA |
| Maximum Drain Source Voltage | 60 V |
| Maximum Drain Source Resistance | 12 Ω |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Transistor Configuration | Single |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Category | Power MOSFET |
| Maximum Power Dissipation | 360 mW |
| Typical Turn-On Delay Time | 6.7 ns |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V |
| Typical Input Capacitance @ Vds | 15 pF @ -25 V |
| Forward Diode Voltage | 1.24V |
| Typical Turn-Off Delay Time | 8.6 ns |
| Maximum Operating Temperature | +150 °C |
| Series | SIPMOS |
| Height | 0.9mm |
| Number of Elements per Chip | 1 |
| Width | 1.3mm |
| Forward Transconductance | 0.13S |
| Length | 2.9mm |
| Dimensions | 2.9 x 1.3 x 0.9mm |
| Transistor Material | Si |