Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Specifications
| Attribute | Value |
|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 80 mA |
| Maximum Collector Emitter Voltage | 12 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 580 mW |
| Minimum DC Current Gain | 70 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 20 V |
| Maximum Emitter Base Voltage | 2 V |
| Maximum Operating Frequency | 8 GHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | 0 °C |
| Length | 2.9mm |
| Height | 1mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Dimensions | 2.9 x 1.3 x 1mm |
BFR193E6327HTSA1
- Markalar Infineon
- Ürün Kodu: BFR193E6327HTSA1
- Depo Yeri : 4
- Stok Durumu: 75
Satın alabilmek için asgari adet: 25
Etiketler:
BFR193E6327HTSA1
