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Type
Designator: CM25MD-24H
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 104
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 25
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V:
2.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 200
Collector Capacity (Cc), typ, pF: 3800
Total Gate Charge (Qg), typ, nC: 125
Package: MODULE